Department of microelectronics

Short name: DM

Phone: +7 495 939 23 06, +7 495 939 55 56, +7 495 939 55 95 (факс)

Site: http://www.sinp.msu.ru/editorial/depts/microelectronics/

 

Department of microelectronics

Department of microelectronics (DME) was organized in 1989 basing on the Department of plasma physics, which was founded in 1966 according to initiative of famous Russian scientist, Academician Lev Artsimovich. At the moment the Department is headed by Professor, DSc. Alexander Rakhimov.

Great experience in the fields of experimental and theoretical studies of plasma processes was gained during the research of low-temperatury plasma. It allowed to expand conducted research subjects and to form a team of highly-skilled specialists.

Currently the basic diretions of the scientific research of the Department are the following:

1. Studies of fundamental processes during the interactions of plasma with new materials with ultrasonic constant of dielectric capacity (OLK organic polymer films, porous silicon-organic films SiOHC) within the pressure range of 20 - 200 mTorr with precise flow control and ions energy. Development of zero-defects etching methods.

2. Theoretical studies of fundamental processes during combustion and interaction of different discharge systems, determining of the most effective conditions of plasma impact.

3. Studies of interaction between strong light fields and plasma or atomic-molecular systems.

4. Atmospheric studies.

5. Photovoltaic energetics.

Within the frames of these scientific fields the following research is carried out:

1. The studies of interaction of plasma and new porous materials (ULK) with ultra-low constant of dielectric capacity. The studies of mechanisms of defects occurence in the studied material due to VUF and atoms flow under conditions characteristic for etching. Determinatio of absorption cross-sections for ULK-materials within the range of 13.5 nm – 193 nm wavelengths and quantum yield of dissociation of menthyl groups. The studies of the processes in HF capacitively-coupled plasma in Ar/CF4/CF3I mixture used for ULK materials' etching. Experimental and theoretical studies of HF capacitive discharge in these mixtures and searching for mechanisms of radicals ions and atoms radiating within VUF range.

2. The studies of the efficiency of influence of nonequilibrium plasma of barrier discharges, double-frequency barrier HF discharges and impulse nano-second discharges on combustion initiation. The studies of the modes with frequency modulation and their influence on the efficiency of fuel mixtures combustion.

3. The studies of atms ionization in the strong classic and nonclassic fields. The studies of polrization response of atoms to strong external optical field. The studies of the properties of long conductive channel plasma produced by femto-second laser. The studies of opportunity of using of such channels for transportation of THz electromagnetic radiation.

4. Development of mobile systems for multi-component air-quality monitoring, based on the analysis of aerosol composition of the atmospere. Determination of the basic sources of compustion products emission at the local and regional levels.

5. Development of high-efficiency double-sided silicon solar cells using transparent conductive oxides and conductive polymer materials. The studies of the influence of contacts forming processes in solar cell on passivation properties of aluminium oxide film. Production of laboratory samples of solar cells using aluminium oxide film on p+-Si surface.

The scientists of the Department take active part in Russian and foreign projects:

- Government contract N 14.740.11.0065 of the Federal special purpose program "Scientific and academic and teaching staff of innovative Russia" for 2009-2013. Subject: "The studies of nonlinear-optical processes in high-intensive ultra-short laser impulses for the purpose of development of the methods for diagnostics and control of the processes with super-high time and spatial resolution". Principal investigator - Professor A.M. Popov. Time line: 06.09.2010 – 15.12.2012. Ministry of science and education of Russian Federation.

- Government contract N 11.519.11.1008 of the Federal special purpose program "Research and development of the top-priority directions of the develoment of scientific and technological complex of Russia for 2007-2013". Subject: "The studies of the processes of interaction of plasma and the surface during thr forming of nano-sized structures in the materials with ultra-low constant of dielectric capacity with participation of interuniversity microelectronic center IMEC". Principal Investigator - Professor Alexander Rakhimov. Time line: 12.03.2012 - 19.06.2013. Ministry of science and education of Russian Federation.

- Government contract N 02.740.11.0863 of the Federal special purpose program "Scientific and academic and teaching staff of innovative Russia" for 2009-2013. Subject: "Experimental and theoretical studies of defects occurence in the modern nanoelectronics materials with lK and ULK constant of dielctric capacity during their interaction with plasma". Principal investigator - Professor Alexander Rakhimov. Time line: 28.06.2010 -15.12.2012. Ministry of science and education of Russian Federation.

- Contract N 2012-KJ-2280 “Mechanism of Plasma Damage During the Etching of Low-к Materials by Fluorocarbon Based Plasmas”. Principal investigator - Professor Alexander Rakhimov. Time line: 01.06 2012 -31.05.2015. SRC, Semiconductor Research Corporation Contracts & Intellectual Property, North Carolina, USA.